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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 90 A
Pd - Power Dissipation : 400 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247AC-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 30 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.4 V
Manufacturer : IR / Infineon
Description : IGBT Transistors 1200V UltraFast Discrete IGBT
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IRG7PH50K10DPBF Images |